US Patent 7365003 - Low-k dielectric carbon nanotube interconnects formed in diamond interlayer
This patent from Intel is directed to fabricating low k dielectric carbon nanotube interconnects for high speed electronics. Claim 1 reads:
1. A method of forming a microelectronic structure comprising:
depositing a diamond interlayer dielectric (ILD) on an underlying layer;
etching a trench opening in the ILD;
depositing a liquid crystal host-carbon nanotube solution on the ILD to fill the trench opening; and
removing at least some of the liquid crystal host leaving a carbon nanotube in the trench opening.