US Patent 7352007 - Phosphorescent nanotube memory
http://www.freepatentsonline.com/7352007.html
This patent from Micron Tech. teaches a new type of optical memory using nanotubes which is proposed as a potential replacement for DRAM. Claim 1 reads:
1. A memory die, comprising: a semiconductor substrate supporting a memory cell array, the memory cell array comprising: a plurality of memory cells, each memory cell further comprising: a pixel capable of emitting and receiving light, and a material localized over the pixel, the material having nanotubes formed therein, the nanotubes having phosphorescent material, wherein the phosphorescent material receives light from and emits light to the pixel; and circuitry connecting the plurality of memory cells to the semiconductor substrate.
This patent from Micron Tech. teaches a new type of optical memory using nanotubes which is proposed as a potential replacement for DRAM. Claim 1 reads:
1. A memory die, comprising: a semiconductor substrate supporting a memory cell array, the memory cell array comprising: a plurality of memory cells, each memory cell further comprising: a pixel capable of emitting and receiving light, and a material localized over the pixel, the material having nanotubes formed therein, the nanotubes having phosphorescent material, wherein the phosphorescent material receives light from and emits light to the pixel; and circuitry connecting the plurality of memory cells to the semiconductor substrate.
Labels: Micron Technology
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