US Patent 7345307 - Nanowire array FET
http://www.freepatentsonline.com/7345307.html
This patent from Nanosys teaches a conductive polymer transistor formed using nanowires. Claim 1 reads:
1. A transistor device comprising:
a. a substrate;
b. a conductive polymer layer deposited on said substrate, said conductive polymer layer including a plurality of nanowires at a sufficient density of nanowires to achieve an operational current level, wherein said plurality of nanowires are oriented substantially parallel to their long axis;
c. a source and drain region defined in said conductive polymer layer; and
d. a gate formed over said conductive polymer layer.
This patent from Nanosys teaches a conductive polymer transistor formed using nanowires. Claim 1 reads:
1. A transistor device comprising:
a. a substrate;
b. a conductive polymer layer deposited on said substrate, said conductive polymer layer including a plurality of nanowires at a sufficient density of nanowires to achieve an operational current level, wherein said plurality of nanowires are oriented substantially parallel to their long axis;
c. a source and drain region defined in said conductive polymer layer; and
d. a gate formed over said conductive polymer layer.
Labels: Nanosys
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