Monday, March 24, 2008

US Patent 7345307 - Nanowire array FET

This patent from Nanosys teaches a conductive polymer transistor formed using nanowires. Claim 1 reads:

1. A transistor device comprising:

a. a substrate;

b. a conductive polymer layer deposited on said substrate, said conductive polymer layer including a plurality of nanowires at a sufficient density of nanowires to achieve an operational current level, wherein said plurality of nanowires are oriented substantially parallel to their long axis;

c. a source and drain region defined in said conductive polymer layer; and

d. a gate formed over said conductive polymer layer.