Tuesday, April 29, 2008

US Patent 7365003 - Low-k dielectric carbon nanotube interconnects formed in diamond interlayer


This patent from Intel is directed to fabricating low k dielectric carbon nanotube interconnects for high speed electronics. Claim 1 reads:

1. A method of forming a microelectronic structure comprising:

depositing a diamond interlayer dielectric (ILD) on an underlying layer;

etching a trench opening in the ILD;

depositing a liquid crystal host-carbon nanotube solution on the ILD to fill the trench opening; and

removing at least some of the liquid crystal host leaving a carbon nanotube in the trench opening.