Thursday, April 24, 2008

US Patent 7361522 - Method of nanowire growth to compensate for lattice mismatch

This patent from Intel uses vertical nanowire arrays to deals with the problem of lattice mismatch that occurs when different crystalline materials are deposited on a substrate. Claim 1 reads:

1. A method comprising: growing nanowires on a first layer; covering said nanowires with an insulator; planarizing said insulator to form a planarized surface; and resuming the growth of nanowires after planarizing to form a planar second layer over the planarized surface, said first and second layers being lattice-mismatched layers.