US Patent 7361522 - Method of nanowire growth to compensate for lattice mismatch

http://www.freepatentsonline.com/7361522.html

This patent from Intel uses vertical nanowire arrays to deals with the problem of lattice mismatch that occurs when different crystalline materials are deposited on a substrate. Claim 1 reads:

1. A method comprising: growing nanowires on a first layer; covering said nanowires with an insulator; planarizing said insulator to form a planarized surface; and resuming the growth of nanowires after planarizing to form a planar second layer over the planarized surface, said first and second layers being lattice-mismatched layers.