Tuesday, January 31, 2012

US Patent 8106383 - Self-aligned graphene transistor


This patent from IBM teaches a way to achieve material processing of both carbon and oxide to achieve self-aligned fabrication of graphene transistors. Claim 1 reads:

1. A graphene field effect transistor comprising:

a gate stack, the gate stack including a seed layer, a gate oxide formed over the seed layer, and a gate metal formed over the gate oxide;

an insulating layer; and

a graphene sheet displaced between the seed layer and the insulating layer, further comprising:

a spacer formed on a top and both sides of the gate stack.