Tuesday, January 24, 2012

US Patent 8101980 - Embedded gate graphene transistor


This patent from Samsung teaches a simplified method for manufacturing graphene nano-ribbon transistors. Claim 1 reads:

1. A graphene device comprising:

at least one embedded gate on a substrate;

an upper oxide layer on the at least one embedded gate; and

a graphene channel and a plurality of electrodes on the upper oxide layer, the plurality of electrodes including a source electrode and a drain electrode,

wherein the at least one embedded gate does not overlap with the source electrode and the drain electrode.