Tuesday, January 24, 2012

US Patent 8101474 - Buried-channel graphene field effect device


It has been found that the gate dielectric can deteriorate the channel mobility of graphene transistors. This patent from IBM teaches a way to manufacture a graphene transistor to avoid this problem. Claim 10 reads:

10. A buried channel graphene device comprising:

a substrate;

a layer of graphene on said substrate;

a layer of amorphous silicon on said graphene layer;

a gate dielectric layer on said amorphous silicon layer;

source and drain contact regions in contact with said graphene layers; and

a gate electrode on said gate dielectric layer in between said source and drain contact regions.