Wednesday, June 29, 2011

US Patent 7968433 - Growing nanowires

This patent from NIST teaches a way to control the growth positions of nanowires. Claim 1 reads:

1. A method of fabricating a nanowire structure, comprising:

photolithographically depositing a nucleation center on a crystalline surface of a substrate;

generating a nanoscale seed from the nucleation center; and

epitaxially growing a nanowire across at least a portion of the crystalline surface starting at a nucleation site where the nanoscale seed is located.