US Patent 7968433 - Growing nanowires
http://www.freepatentsonline.com/7968433.html
This patent from NIST teaches a way to control the growth positions of nanowires. Claim 1 reads:
1. A method of fabricating a nanowire structure, comprising:
photolithographically depositing a nucleation center on a crystalline surface of a substrate;
generating a nanoscale seed from the nucleation center; and
epitaxially growing a nanowire across at least a portion of the crystalline surface starting at a nucleation site where the nanoscale seed is located.
This patent from NIST teaches a way to control the growth positions of nanowires. Claim 1 reads:
1. A method of fabricating a nanowire structure, comprising:
photolithographically depositing a nucleation center on a crystalline surface of a substrate;
generating a nanoscale seed from the nucleation center; and
epitaxially growing a nanowire across at least a portion of the crystalline surface starting at a nucleation site where the nanoscale seed is located.
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