Tuesday, June 21, 2011

US Patent 7963148 - ZnO nanowire gas sensor


This patent from National Formosa University aims to improve the performance of gas sensors using ZnO nanowires as channel material of a field effect transistor. Claim 1 reads:

1. A gas sensor device made of ZnO nanowire field effect transistor consisting of:

(a) a Si substrate;

(b) a SiO2 film grown on Si substrate;

(c) an metal film coated on SiO2 film;

(d) an insulator film deposited on metal film;

(e) a ZnO nanowire film coated on insulator film;

(f) two metal electrodes deposited on ZnO nanowire film and spaced by a trench; and

(g) an alloy wire coated on the back side of Si substrate.