Thursday, June 16, 2011

US Patent 7960715 - Semiconductor heterostructure nanowire

This patent from the University of Iowa includes some basic claims for nanowire heterostuctures. Claim 1 reads:

1. A heterostructure semiconductor nanowire device, comprising:

a first portion comprising a first compound semiconductor material; and

a second portion adjacent to the first portion and comprising a second compound semiconductor material,

wherein the first compound semiconductor material and the second compound semiconductor material are selected such that at least one of the first portion or the second portion is substantially metallic.