Wednesday, June 15, 2011

US Patent 7960258 - Fabricating nanoscale thermoelectric device

This patent from National Chiao Tung University teaches a method of manufacturing high efficiency thermoelectric cooling devices using p-type and n-type nanowires. Claim 1 reads:

1. A method for fabricating a nanoscale thermoelectric device, comprising steps:

(A) providing at least one template having a group of nanoscale pores;

(B) forming a first substrate on a bottom of said template;

(C) injecting a molten semiconductor material into said nanoscale pores with a pressure-casting method in a vacuum environment to form a group of semiconductor nanoscale wires; and

(D) removing said first substrate to obtain a semiconductor nanoscale wire array.