Monday, September 27, 2010

US Patent 7800139 - Back gate nanowire thin film transistor

Langmuir-Blodgett films have been used to deposit nanowire semiconductor layers in the fabrication of thin film transistors but the nanowires tend to lack alignment using this method. This patent from LG Display teaches a way to overcome this problem using electrostatic fields from alignment electrodes. Claim 1 reads:

1. A method for fabricating a thin film transistor, comprising:

forming a gate electrode on a substrate;

forming an insulating film on an entire surface of the substrate including the gate electrode;

forming alignment electrodes on the insulating film such that the alignment electrodes face each other, to define a channel region;

forming an organic film on the insulting film including the alignment electrodes, to expose the channel region;

coating a nanowire-dispersed solution over the substrate and the organic film;

forming a nanowire semiconductor layer in the channel region by generating an electric field between the alignment electrodes;

removing a solvent included in the solution; and

removing the organic film.