Friday, September 17, 2010

US Patent 7795677 - Nanowire SOI field effect transistor

This patent from IBM teaches the latest variation of nanowire FETs based on silicon-on-insulator technology. Claim 1 reads:

1. A field-effect transistor (FET) comprising:

a substrate having a silicon-on-insulator (SOI) layer which is divided into at least two sections electrically isolated from one another, one section forming a source region and the other section forming a drain region;

a channel region comprising at least one nanowire that connects the source region and the drain region, wherein the nanowire is disposed over the SOI layer;

an epitaxial semiconductor material, grown from the SOI layer, connecting the nanowire to each section of the SOI layer; and

a gate over the channel region.