US Patent 7790539 - DWCNT field effect transistor

http://ip.com/patent/US7790539

This is another patent from Sony (see also US 7719032) teaching a method to form a field effect transistor from a single multi-wall carbon nanotube. Claim 1 reads:

1. A method for producing an electronic device including a multi-walled carbon nanotube having at least two layers, the method comprising the steps of:

supplying current to part of an outer carbon nanotube layer to remove the part of the outer carbon molecule layer;

providing at least one current-input means to the outer carbon nanotube layer;

providing at least one current-output means to the outer carbon nanotube layer; and

providing at least one voltage-applying means to an inner carbon nanotube layer.