US Patent 7786464 - Nanocrystal enhanced phase change RAM

http://ip.com/patent/US7786464

This patent from Infineon is based on the finding that nanocrystals can be used to increase the current density and thus reduce power requirements for phase change memory. Claim 1 reads:

1. An integrated circuit comprising:

a first electrode;

resistivity changing material coupled to the first electrode;

a second electrode; and

a dielectric material layer between the resistivity changing material and the second electrode, the dielectric material layer comprising nanocrystals.