Monday, September 06, 2010

US Patent 7786464 - Nanocrystal enhanced phase change RAM

This patent from Infineon is based on the finding that nanocrystals can be used to increase the current density and thus reduce power requirements for phase change memory. Claim 1 reads:

1. An integrated circuit comprising:

a first electrode;

resistivity changing material coupled to the first electrode;

a second electrode; and

a dielectric material layer between the resistivity changing material and the second electrode, the dielectric material layer comprising nanocrystals.