Thursday, September 22, 2011

US Patent 8022432 - LED including nanorod transparent electrodes

http://www.freepatentsonline.com/8022432.html

This patent from LG Display teaches forming nanorod structures in a transparent electrode to minimize internal reflection and increase light emission in display and LED applications. Claim 1 reads:

1. A light-emitting device, comprising:

a first conductive semiconductor layer, a light-emitting active layer, and a second conductive semiconductor layer, each of which is sequentially laminated on a substrate;

a plurality of nanorods, grown from a transparent conductive material, formed on the second conductive semiconductor layer;

an electrode formed on the plurality of nanorods; and

another electrode formed on the first conductive semiconductor layer, wherein each of the plurality of nanorods comprises a transparent material loaded into gaps between the nanorods to expose upper surfaces of the nanorods or upper tips thereof.

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Monday, September 27, 2010

US Patent 7800139 - Back gate nanowire thin film transistor

http://ip.com/patent/US7800139

Langmuir-Blodgett films have been used to deposit nanowire semiconductor layers in the fabrication of thin film transistors but the nanowires tend to lack alignment using this method. This patent from LG Display teaches a way to overcome this problem using electrostatic fields from alignment electrodes. Claim 1 reads:

1. A method for fabricating a thin film transistor, comprising:

forming a gate electrode on a substrate;

forming an insulating film on an entire surface of the substrate including the gate electrode;

forming alignment electrodes on the insulating film such that the alignment electrodes face each other, to define a channel region;

forming an organic film on the insulting film including the alignment electrodes, to expose the channel region;

coating a nanowire-dispersed solution over the substrate and the organic film;


forming a nanowire semiconductor layer in the channel region by generating an electric field between the alignment electrodes;

removing a solvent included in the solution; and

removing the organic film.

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Sunday, September 27, 2009

US Patent 7593082 - CNT/Polyimide alignment material

http://www.freepatentsonline.com/7593082.html

This patent from LG Display teaches mixtures of CNT and polyimide to facilitate alignment of LCD materials. Claim 1 reads:

1. An alignment material for a liquid crystal display (LCD) device, comprising a mixture of carbon nano-tube and polyimide.

An example of uncited prior art which appears relevant is the article "Liquid crystal-carbon nanotube dispersions" published in the Journal of Applied Physics on 25 January 2005 which teaches using a rubbed polyimide alignment layer in a CNT-liquid crystal dispersion.

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Sunday, December 21, 2008

US Patent 7465612 - Nanowire channel FET fabrication with bottom gate

http://www.freepatentsonline.com/7465612.html

The two basic approaches to incorporating nanowire semiconductor channels in transistor design are 1)nanowire growth directly on the substrate and 2) printing prefabricated nanowires using an inkjet or other printing device. This patent from LG Display teaches a variation of the later approach allowing for improved yield by forming a bottom gate contact prior to the nanowire deposition and source/drain fabrication. Claim 1 reads:

1. A fabricating method of a thin film transistor substrate, the method comprising:

forming a gate electrode on a substrate;

forming a gate insulating film on the gate electrode, the gate insulating film having a groove in an area corresponding to an area where an active layer of a thin film transistor is to be formed;

forming the active layer of the thin film transistor by use of a nanowire in the groove of the gate insulating film; and

forming a source electrode and a drain electrode on the active layer.

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