Sunday, December 21, 2008

US Patent 7465612 - Nanowire channel FET fabrication with bottom gate

The two basic approaches to incorporating nanowire semiconductor channels in transistor design are 1)nanowire growth directly on the substrate and 2) printing prefabricated nanowires using an inkjet or other printing device. This patent from LG Display teaches a variation of the later approach allowing for improved yield by forming a bottom gate contact prior to the nanowire deposition and source/drain fabrication. Claim 1 reads:

1. A fabricating method of a thin film transistor substrate, the method comprising:

forming a gate electrode on a substrate;

forming a gate insulating film on the gate electrode, the gate insulating film having a groove in an area corresponding to an area where an active layer of a thin film transistor is to be formed;

forming the active layer of the thin film transistor by use of a nanowire in the groove of the gate insulating film; and

forming a source electrode and a drain electrode on the active layer.