Thursday, September 25, 2008

US Patent 7427541 - CNT energy well FET

This patent from Intel teaches a method of forming a carbon nanotube transistor with less leakage current. Claim 1 reads:

1. A method, comprising:

creating a structure to form an energy well within a Carbon nanotube by placing a Carbon nanotube on a doped semiconductor region;

forming an undoped semiconductor region over said Carbon nanotube; and

delta doping said undoped semiconductor region above a first portion of said Carbon nanotube.