Tuesday, April 17, 2012

US Patent 8158254 - 2D conductive silicide nanostructures


This patent based on research from Boston College teaches the fabrication of a two dimensional mesh structure formed from interconnected silicide nanowires. Claim 1 reads:

1. A conductive silicide comprising

a plurality of connected and spaced-apart nanobeams linked together at an about 90-degree angle,

the plurality of nanobeams forming a two-dimensional nanostructure having a mesh-like appearance.