US Patent 8113437 - Memresistor RFID
http://www.freepatentsonline.com/8113437.html
There is currently a collaboration between Hewlett Packard and Hynix Semiconductor to produce a ReRAM product by 2013 (which they are incorrectly calling a memristor). This patent may be indicative that the first product may be related to RFID technology. Claim 1 reads:
1. A radio frequency identification (RFID) device comprising:
a radio signal transceiver configured to transmit/receive a radio signal to/from an external reader;
a digital unit configured to detect a command signal from an output of the radio signal transceiver and output a control signal corresponding to the command signal; and
a memory unit that includes a resistive switch device (RSD) having memristor characteristics and that is configured to perform a data read or write operation in response to the control signal and to write data in the resistive switch device depending on a voltage difference between a bit line and a cell plate line,
wherein the resistive switch device is coupled to the bit line and the cell plate line and a voltage level of the cell plate line changes according to a logic state of the data.
There is currently a collaboration between Hewlett Packard and Hynix Semiconductor to produce a ReRAM product by 2013 (which they are incorrectly calling a memristor). This patent may be indicative that the first product may be related to RFID technology. Claim 1 reads:
1. A radio frequency identification (RFID) device comprising:
a radio signal transceiver configured to transmit/receive a radio signal to/from an external reader;
a digital unit configured to detect a command signal from an output of the radio signal transceiver and output a control signal corresponding to the command signal; and
a memory unit that includes a resistive switch device (RSD) having memristor characteristics and that is configured to perform a data read or write operation in response to the control signal and to write data in the resistive switch device depending on a voltage difference between a bit line and a cell plate line,
wherein the resistive switch device is coupled to the bit line and the cell plate line and a voltage level of the cell plate line changes according to a logic state of the data.
Labels: Hynix Semiconductor
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