Thursday, February 09, 2012

US Patent 8110476 - Atomic layer carbon memresistor

This patent from SanDisk3D teaches the manufacturing of a new type of carbon-based memresistor based on the deposition of atomic layers using PECVD. Claim 1 reads:

1. A method of forming a memory cell comprising:

forming a steering element above a substrate; and

forming a memory element coupled to the steering element, wherein the memory element comprises a metal-insulator-metal stack comprising a resistivity-switching carbon-based material sandwiched between two conducting layers,

wherein the carbon-based material is disposed above one of the conducting layers, and the other conducting layer is disposed above the carbon-based material, and wherein the carbon-based material has a thickness of not more than ten atomic layers.