Thursday, February 09, 2012

US Patent 8110510 - Low temperature synthesis of nanowires in solution

This patent from Merck Patent GmbH teaches techniques to lower the fabrication temperature of semiconductor nanowires to below 400 C. Claim 1 reads:

1. A method for producing nanowires, comprising:

exposing at least one nanowire precursor to metal nanoparticles in a nanowire growth solution comprising an organic solvent in a non-supercritical state, whereby the metal nanoparticles act as seed particles for the growth of the nanowires,

wherein the nanowires comprise a material selected from the group consisting of (a) Group IV elements, (b) Group II elements other than cadmium, (c) Group VI elements other than tellurium, (d) combinations of a Group III element and a Group V element which include at least one element selected from the group consisting of aluminum and, nitrogen, and (e) GaP.