Tuesday, November 01, 2011

US Patent 8048474 - Graphene memory resistance cell


In the past few years Sharp and Samsung have been developing new forms of high endurance non-volatile memory called RRAM based on metal oxide materials. This patent from SanDisk 3D teaches the manufacture of a new variation of RRAM based on graphene. Claim 1 reads:

1. A method of making a nonvolatile memory cell, comprising:

forming a steering element; and

forming a graphene storage element;

wherein the step of forming the graphene storage element comprises:

providing a graphene colloid; and

coating the graphene colloid over a substrate to form a graphene layer.