Wednesday, October 26, 2011

US Patent 8044379 - High density silicon nanowire bundles

This patent from Hitachi teaches the formation of high surface area silicon nanowire arrays useful to increase the sensitivity of nanosensors and contacts in nanoelectronic devices. Claim 1 reads:

1. A structure comprising:

well-aligned, densely packed bundles of silicon nanowires, each nanowire having a diameter of less than about 50 nm and a length of 10 nm -100 microns, the dimensions of the nanowires being substantially uniform, the structure consisting essentially of silicon and oxygen, or compounds thereof, and the structure having a porosity of at least 80%.