Wednesday, October 26, 2011

US Patent 8043942 - Method for producing core-shell nanowires

This patent from Samsung teaches process steps to form silicon nanowire core/shell pn junctions for use as high efficiency light emitting diodes. Claim 1 reads:

1. A method for producing core-shell nanowires, the method comprising the steps of:

(a) forming a metal layer directly on a substrate;

(b) forming an insulating film on the metal layer;

(c) patterning the insulating film;

(d) forming a plurality of nanowire cores in a direction perpendicular to the substrate on areas of the substrate from which portions of the insulating film are removed by the patterning; and

(e) forming first nanowire shells on surfaces of the nanowire cores to produce the core-shell nanowires.