Thursday, October 27, 2011

US Patent 8044750 - SiC/metal nanoresonator

This patent from Samsung teaches a nanoscale resonator capable of operating at room temperature with a resonance frequency in the GHz range. Claim 1 reads:

1. A nano-resonator including a beam having a composite structure, comprising:

a silicon carbide beam;

a metal conductor on the silicon carbide beam, the metal conductor having a density lower than a density of the silicon carbide beam; and

an oxide layer on the metal conductor.