Monday, September 12, 2011

US Patent 8014188 - CNT ReRAM

This patent from Toshiba teaches a type of memory resistor structure formed from carbon nanotubes. Claim 1 reads:

1. An electric element, comprising:

a pair of electrodes; and

a plurality of powder-condensed and solidified carbon nanotubes of three-dimensional network structure which are located between the pair of electrodes.