Monday, September 12, 2011

US Patent 8012289 - Release substrates fabricated from nanoparticles

In semiconductor processing it is occasionally useful to have a detachable release substrate more compatible with the manufacturing steps than the final substrate. This patent from Silicon on Insulator Technologies teaches the advantage of using nanoparticles in such a release substrate in order to simplify release after annealing process steps. Claim 1 reads:

1. A method of fabricating a release substrate of semiconductor materials, which comprises

forming a reversible connection between two substrate release layers by providing a connecting layer of a first material, and

providing a concentrated zone of solid nanoparticles of a second material that is different from the first material in the connecting layer to facilitate release of the substrate release layers, with the connecting layer having a bonding energy that is substantially constant even when the release substrate is exposed to heat treatment.