US Patent 8012289 - Release substrates fabricated from nanoparticles
http://www.freepatentsonline.com/8012289.html
In semiconductor processing it is occasionally useful to have a detachable release substrate more compatible with the manufacturing steps than the final substrate. This patent from Silicon on Insulator Technologies teaches the advantage of using nanoparticles in such a release substrate in order to simplify release after annealing process steps. Claim 1 reads:
1. A method of fabricating a release substrate of semiconductor materials, which comprises
forming a reversible connection between two substrate release layers by providing a connecting layer of a first material, and
providing a concentrated zone of solid nanoparticles of a second material that is different from the first material in the connecting layer to facilitate release of the substrate release layers, with the connecting layer having a bonding energy that is substantially constant even when the release substrate is exposed to heat treatment.
In semiconductor processing it is occasionally useful to have a detachable release substrate more compatible with the manufacturing steps than the final substrate. This patent from Silicon on Insulator Technologies teaches the advantage of using nanoparticles in such a release substrate in order to simplify release after annealing process steps. Claim 1 reads:
1. A method of fabricating a release substrate of semiconductor materials, which comprises
forming a reversible connection between two substrate release layers by providing a connecting layer of a first material, and
providing a concentrated zone of solid nanoparticles of a second material that is different from the first material in the connecting layer to facilitate release of the substrate release layers, with the connecting layer having a bonding energy that is substantially constant even when the release substrate is exposed to heat treatment.
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