US Patent 8013324 - Structurally stabilized semiconductor nanowire

http://www.freepatentsonline.com/8013324.html

There have already been numerous patented designs for sublithographic field effect transistors based on nanowire channels having a surrounding gate structure. This patent from IBM proposes such a nanoFET design with improved structural stability. Claim 1 reads:

1. A semiconductor structure comprising:

a semiconductor nanowire having a constant-width portion located between a first end portion and a second end portion, wherein said constant-width portion has a constant first initial width between said first end portion and said second end portion;

a first semiconductor pad located on a substrate and adjoining said first end portion of said semiconductor nanowire, wherein said first end portion has a second initial width that is greater than said first initial width at an interface with said first semiconductor pad;

a second semiconductor pad located on said substrate and adjoining said second end portion of said semiconductor nanowire, wherein said second end portion has a first width that is greater than said second initial width at an interface with said second semiconductor pad;

a channel region located in said constant-width portion of said semiconductor nanowire and having a doping of a first conductivity type;

a gate dielectric located on and surrounding said channel region; and

a gate electrode located on and surrounding said gate dielectric.