US Patent 7854991 - Aligned SWCNT array with high purity and surface area

http://www.freepatentsonline.com/7854991.html

This patent from National Institute of Advanced Industrial Science and Technology teaches CVD growth methods for single walled carbon arrays resulting in high purity and surface area. Claim 1 reads:

1. A single-walled carbon nanotube bulk structure comprising a plurality of aligned single-walled carbon nanotubes,

wherein a specific surface area of the plurality of aligned single-walled carbon nanotubes is 800 m2/g or more and 2,500 m2/g or less, and

purity measured by fluorescence X-rays of the plurality of aligned single-walled carbon nanotubes is 98% or more.