Monday, December 20, 2010

US Patent 7851790 - Isolated germanium nanowire on silicon fin

Germanium was the first material used for transistors but was quickly replaced with silicon which was found to produce better thermal stability and provide manufacturing advantages. As higher speed electronics are desired germanium may again become an option due to its higher mobility. This patent from Intel teaches a germanium nanowire as a channel of FinFET type transistors. Claim 1 reads:

1. A Germanium nanowire of comprising:

a Germanium core; and

a Silicon Oxide shell disposed around said Gemanium core;

wherein the Germanium nanowire comprises a diameter of 30-45 nm.