Monday, December 20, 2010

US Patent 7851292 - CNT floating gate memory

This patent from Micron Technologies teaches a way to form floating gate memory cells used in Flash memory with carbon nanotubes in the transistor channels to facilitate ballistic electron injection. Claim 1 reads:

1. A method of forming a floating-gate memory cell, comprising:

forming source/drain regions in a semiconductor substrate, wherein the source/drain regions define a channel region therebetween;

forming a plurality of carbon nanotubes overlying at least a portion of the channel region;

forming a tunnel dielectric layer overlying the carbon nanotubes;

forming a floating-gate layer overlying the tunnel dielectric layer;

forming an intergate dielectric layer overlying the floating-gate layer; and

forming a control gate layer overlying the intergate dielectric layer.