Monday, December 20, 2010

US Patent 7851841 - Core/shell nanowire transistor

This latest patent from Nanosys has relatively early priority (Sep. 30, 2002) and includes some basic claims to field effect transistors formed from core-shell nanowires. Claim 1 reads:

1. A semiconductor device comprising:

a substrate;

a plurality of nanowires deposited or formed on the substrate, wherein said nanowires each comprise a core made of a first material and at least a first shell layer made of a second material disposed about said core, wherein said second material is made from a high dielectric constant material; and

at least a first source contact and a first drain contact formed in or on the substrate providing electrical connectivity to the plurality of nanowires, wherein the nanowires each form an individual channel between said at least first source and drain contacts.