Sunday, January 09, 2011

US Patent 7864560 - Nano-optical memory array

http://www.freepatentsonline.com/7864560.html

This patent suggests a type of programmable analog array using optical molecules as memory storage elements. Claim 1 reads:   

1. A nano device, comprising:

an army of cells disposed in rows and columns and constructed over a substrate, and

an optical circuit disposed over the substrate,

wherein the optical circuit is formed by nano elements in a self-assembled process, wherein the nano elements include optical storage molecules.

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Wednesday, January 05, 2011

US Patent 7862624 - Nanoparticles on fabric or textile

http://www.freepatentsonline.com/7862624.html

The addition of metal nanoparticles to clothing can add features of odor resistance, reduced discoloration, and improved fabric strength. This patent also teaches using such metal nanoparticles in fabric to form materials of electronic or photovoltaic devices. Claim 1 reads:

1. A wash durable material, comprising:

a substrate having strands with void spaces inside the strands; and

nano-particles inside the strands filling at least a part of the void with one or more projections from the void spaces through the strands on the substrate,

wherein the nano-particles are used with one or more of a metal, a solar cell compound, an interconnect compound, antenna compound, an electronic compound.

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Sunday, February 15, 2009

US Patent 7489537 - Optical nanoelectronic memory array

http://www.freepatentsonline.com/7489537.html

There has been a good amount of work by researchers at HP labs and elsewhere over the past decade in producing reconfigurable electronics systems as a next step after Moore's Law. So far most of these efforts have been directed to reconfigurable logic but another area which may benefit is reconfigurable analog electronics. This patent from Bao Tran teaches a memory formed from optical nanoelements to achieve such reconfigurable analog electronics. Claim 1 reads:

1. A memory device, comprising:

an array of memory cells disposed in rows and columns and constructed over a substrate, each memory cell comprising a first signal electrode, a second signal electrode, and a nano-layer disposed in the intersecting region between the first signal electrode and the second signal electrode;

a plurality of word lines each connecting the first signal electrodes of a row of memory cells; and

a plurality of bit lines each connecting the second signal electrodes of a column of memory cells, wherein the nano-layer comprises optical nano elements.

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Thursday, May 22, 2008

US Patent 7375417 - Nanoceramic heat sink for IC package

http://www.freepatentsonline.com/7375417.html

This patent from independent inventor Bao Tran teaches incorporating carbon nanomaterials into a ceramic host material to create an efficient heat sink for IC cooling. Claim 1 reads:

1. A package for an integrated circuit, comprising:

a chip having a plurality of nodes adapted to receive signals from or to output signals to an external circuit; and

a frame having a plurality of contact points each coupled to one node of the chip; and

a nano ceramic material in thermal communication with the chip for removing heat from the chip.

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Tuesday, February 19, 2008

US Patent 7330369 - Molecular magnetic nanolayer memory

http://www.freepatentsonline.com/7330369.html

This patent from Bao Tran (assumedly an independent inventor) claims a molecular memory system similar to that suggested by Hewlett-Packard's QSR group but which uses single molecular magnets (SMMs) instead of the rotaxane molecular switches used by HP. Claim 1 reads:

1. A memory device, comprising: an array of memory cells disposed in rows and columns and constructed over a substrate, each memory cell comprising a first signal electrode, a second signal electrode, and a single molecule magnetic nano-layer disposed in the intersecting region between the first signal electrode and the second signal electrode, a plurality of word lines each connecting the first signal electrodes of a row of memory cells; and a plurality of bit lines each connecting the second signal electrodes of a column of memory cells.

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