Tuesday, February 19, 2008

US Patent 7330369 - Molecular magnetic nanolayer memory


This patent from Bao Tran (assumedly an independent inventor) claims a molecular memory system similar to that suggested by Hewlett-Packard's QSR group but which uses single molecular magnets (SMMs) instead of the rotaxane molecular switches used by HP. Claim 1 reads:

1. A memory device, comprising: an array of memory cells disposed in rows and columns and constructed over a substrate, each memory cell comprising a first signal electrode, a second signal electrode, and a single molecule magnetic nano-layer disposed in the intersecting region between the first signal electrode and the second signal electrode, a plurality of word lines each connecting the first signal electrodes of a row of memory cells; and a plurality of bit lines each connecting the second signal electrodes of a column of memory cells.