US Patent 8203864 - Forming nanotube ReRAM
http://www.freepatentsonline.com/8203864.html
Sandisk, a major player in flash drive technology, has begun patenting various solutions for ReRAM memory in the last few years. This latest patent focuses on fabricating ReRAM using carbon nanotube material. Claim 1 reads:
1. A method of forming a memory cell, the method comprising:
forming a first conductor;
forming a steering element above the first conductor;
forming a carbon nanotube material coupled in series with the steering element; and
forming a second conductor above the carbon nanotube material.
Sandisk, a major player in flash drive technology, has begun patenting various solutions for ReRAM memory in the last few years. This latest patent focuses on fabricating ReRAM using carbon nanotube material. Claim 1 reads:
1. A method of forming a memory cell, the method comprising:
forming a first conductor;
forming a steering element above the first conductor;
forming a carbon nanotube material coupled in series with the steering element; and
forming a second conductor above the carbon nanotube material.
Labels: SanDisk 3D
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