Monday, June 25, 2012

US Patent 8203864 - Forming nanotube ReRAM

Sandisk, a major player in flash drive technology, has begun patenting various solutions for ReRAM memory in the last few years. This latest patent focuses on fabricating ReRAM using carbon nanotube material. Claim 1 reads:

1. A method of forming a memory cell, the method comprising:

forming a first conductor;

forming a steering element above the first conductor;

forming a carbon nanotube material coupled in series with the steering element; and

forming a second conductor above the carbon nanotube material.