Thursday, June 14, 2012

US Patent 8198707 - Forming thin dielectric layer on graphene

In order to fabricate MOSFETs it is necessary to form a uniform thickness insulation layer on the semiconductor active layer. In the case of graphene MOSFETs it has been proposed to expose the graphene to reactive oxygen but this leads to the creation of defects leading to unreliable manufacture. This patent from the University of Texas teaches a new technique which may solve this problem and facilitate graphene transistor manufacturing. Claim 1 reads:

1. A method for forming a uniformly thin dielectric layer on graphene, the method comprising:

transferring graphene onto a surface of one of a first dielectric layer and a substrate;

depositing a layer of one of a metal and a semiconductor on said graphene;

subjecting said layer of one of said metal and said semiconductor to an oxidation process; and

depositing a second dielectric layer on one of said oxidized metal and said oxidized semiconductor.