Thursday, June 21, 2012

US Patent 8203179 - Complex oxide nanodot memory transistor

This patent from Micron Technology teaches using "nanodot" structures in a perovskite thin film for a charge trapping layer in order to scale memory transistors beyond the capability of SONOS or Flash non-volatile memory. Claim 1 reads:

1. A device having a memory cell, the memory cell comprising:

an active area formed of a semiconductor material;

a first dielectric over the semiconductor material;

a second dielectric comprising a material having a perovskite structure over the first dielectric, wherein the second dielectric comprises a plurality of spaced-apart nanodots, wherein the nanodots have a density in the range of about 1×1011/cm2 to about 1×1014/cm2;

a third dielectric over the second dielectric; and

a gate electrode over the third dielectric.