US Patent 8187955 - Graphene growth on a carbon-containing semiconductor layer

http://www.freepatentsonline.com/8187955.html

This patent from IBM teaches growing graphene films on 200mm or 300mm silicon wafers using a double annealing process. Claim 1 reads:

1. A method of forming a graphene layer including at least one graphene monolayer, said method comprising:

forming a semiconductor-carbon alloy layer comprising a material other than crystalline silicon carbide on a semiconductor substrate;

converting said semiconductor-carbon alloy layer into a semiconductor carbide layer by a first anneal; and

converting an exposed top portion of said semiconductor carbide layer into a graphene layer including at least one graphene monolayer by a second anneal.