US Patent 8022444 - Silicon nanowire biosensor
http://www.freepatentsonline.com/8022444.html
This patent teaches a nanowire chemfet sensor in which the contact resistance between the silicon nanowire channel and the source/drain electrodes is reduced in order to improve the sensitivity. Claim 1 reads:
1. A biosensor comprising:
a silicon substrate;
a source region disposed on the silicon substrate;
a drain region disposed on the silicon substrate;
a silicon nanowire disposed on the source region and the drain region, and having a defect region formed by irradiation of an electron beam; and
wherein the defect region has a lower electron mobility than other regions of the silicon nanowire.
This patent teaches a nanowire chemfet sensor in which the contact resistance between the silicon nanowire channel and the source/drain electrodes is reduced in order to improve the sensitivity. Claim 1 reads:
1. A biosensor comprising:
a silicon substrate;
a source region disposed on the silicon substrate;
a drain region disposed on the silicon substrate;
a silicon nanowire disposed on the source region and the drain region, and having a defect region formed by irradiation of an electron beam; and
wherein the defect region has a lower electron mobility than other regions of the silicon nanowire.
Labels: Electronics and Telecommunications Research Institute
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