Wednesday, September 21, 2011

US Patent 8022383 - 2-terminal silicon mem-resistor

This patent from the National Institute of Advanced Industrial Science and Technology (Japan) teaches a new variation of RRAM based on silicon films separated by a nanoscale gap. Claim 1 reads:

1. A two-terminal resistance switching element, comprising

two silicon films each doped with an impurity arranged with a gap width in the order of nanometers,

wherein the switching element gives a resistance hysteresis observed at bias voltages lower than 5V when a voltage is applied to the silicon films, and expresses a non-volatile resistance change.