Thursday, September 22, 2011

US Patent 8022408 - Semiconductor nanowire on insulator

This patent from Samsung teaches a design technique for crystalline nanowire transistors which provides higher mobility and fewer defects than other nanowire designs. Claim 1 reads:

1. A crystalline nanowire substrate comprising:

a substrate;

an insulating film disposed on the substrate as a strip shape such that all side surfaces of the strip shape meet a bottom surface of the strip shape, the insulating film having exposed side surfaces; and

a crystalline nanowire film covering an uppermost surface of the insulating film and having sidewalls aligned with the exposed side surfaces of the insulating film,

wherein the crystalline nanowire film is a single crystalline material selected from the group consisting of Si, Ge, SiGe, and SiC.