Saturday, April 30, 2011

US Patent 7932549 - CNT trench capacitors

DRAM is a form of volatile semiconductor memory able to achieve high density due to a simple structure of one transistor and one capacitor and is commonly used as a main memory in personal computers. This patent from IBM teaches a way to use carbon nanotubes to fabricate the capacitors of DRAM memory cells. Claim 1 reads:

1. A trench-type storage device comprising:

a substrate;

a trench in said substrate;

multiple conductive carbon nanotubes lining said trench; and

a trench conductor, surrounded by and in direct contact with said multiple conductive carbon nanotubes, filling said trench, wherein said trench conductor and said substrate have a co-planar top surface.