Monday, March 28, 2011

US Patent 7910492 - Nanowhisker PN junctions

This patent is from QuNano AB and includes some fundamental claims to manufacturing light emitting devices based on III-V semiconductor nanowhiskers. Claim 3 reads:

3. A method of making a device comprising:

providing a substrate;

forming a nanowhisker standing upright from the substrate; and

forming a coaxial layer around at least a portion of the nanowhisker,

wherein the coaxial layer has a thickness greater than 200 nm, the nanowhisker comprises a III-V semiconductor and the coaxial layer comprises a III-V semiconductor.