Thursday, March 17, 2011

US Patent 7906095 - Method of growing CNTs

This patent is from Fujitsu and is based on the finding that long and straight carbon nanotubes with uniform diameter can be manufactured by quickly increasing temperature during CVD growth. Claim 1 reads:

1. A method of growing a carbon nanotube, comprising:

adhering catalytic particles to an upper surface of a substrate;

introducing a raw gas containing carbon atoms in a chamber at below 400° C.;

after introducing the raw gas, starting raising a substrate temperature at a speed of 500° C./minute or faster in the chamber with the raw gas previously introduced therein.