US Patent 7902736 - Gated nanorod field emitter
http://www.freepatentsonline.com/7902736.html
This patent from GE teaches a variation of field emission devices based on metallic nanorods. Claim 1 reads:
1. A gated nanorod field emission device comprising:
a) a substrate;
b) a dielectric layer residing on the substrate;
c) a gate metal layer residing on top of the dielectric layer;
d) microcavities in the dielectric and gate metal layers;
e) nanoporous anodized aluminum oxide posts residing on the substrate within the microcavities; and
f) nanorod field emitters in the nanoporous anodized aluminum oxide posts.
This patent from GE teaches a variation of field emission devices based on metallic nanorods. Claim 1 reads:
1. A gated nanorod field emission device comprising:
a) a substrate;
b) a dielectric layer residing on the substrate;
c) a gate metal layer residing on top of the dielectric layer;
d) microcavities in the dielectric and gate metal layers;
e) nanoporous anodized aluminum oxide posts residing on the substrate within the microcavities; and
f) nanorod field emitters in the nanoporous anodized aluminum oxide posts.
Labels: General Electric
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