Monday, March 14, 2011

US Patent 7902736 - Gated nanorod field emitter

This patent from GE teaches a variation of field emission devices based on metallic nanorods. Claim 1 reads:

1. A gated nanorod field emission device comprising:

a) a substrate;

b) a dielectric layer residing on the substrate;

c) a gate metal layer residing on top of the dielectric layer;

d) microcavities in the dielectric and gate metal layers;

e) nanoporous anodized aluminum oxide posts residing on the substrate within the microcavities; and

f) nanorod field emitters in the nanoporous anodized aluminum oxide posts.