Wednesday, March 02, 2011

US Patent 7897960 - Self-aligned nanotube FET

This patent from IBM has relatively early priority (2002) and teaches a variation of vertical nanotube transistors. Claim 1 reads:

1. A carbon-nanotube field effect transistor semiconductor device comprising:

a vertical carbon-nanotube wrapped in a dielectric material exposing first and second ends of the vertical carbon-nanotube;

a source formed at the first end of the vertical carbon-nanotube;

a drain formed at the second end of the vertical carbon-nanotube; and

a plurality of gate metal pillars formed adjacent to a stack comprising the source, the drain, the vertical carbon-nanotube, wherein the drain is at least partially disposed between the plurality of gate metal pillars.