Sunday, February 27, 2011

US Patent 7893495 - Zinc oxide nanodisk FET

Zinc oxide has been used as a channel material for thin film transistors but has low electron mobility. This patent teaches fabricating zinc oxide nanodisks which can improve the mobility. Claim 1 reads:

1. A thin film transistor, comprising:

a substrate;

a gate electrode a source electrode and a drain electrode;

a dielectric layer; and

a semiconductor layer;

wherein the semiconductor layer comprises zinc oxide nanodisks oriented with their c-axis perpendicular to the dielectric layer or the substrate; and

wherein the zinc oxide nanodisks have a height of from about 1 nanometer to about 100 nanometers.