US Patent 7803707 - Fabrication of metal silicide nanowires
http://ip.com/patent/US7803707
Metal silicides are silicon compounds used in the formation of low resistivity ohmic contacts in microelectronics. This patent from the Wisconsin Alumni Research Foundation teaches a fabrication process for growing metal silicide nanowires on ultrathin silicon oxide films which could provide extremely small gate lines for nano-MOSFETs. Claim 1 reads:
1. A method for producing single-crystal, free-standing transition metal silicide nanowires comprising growing the nanowires on a surface of a silicon oxide film on a silicon substrate, wherein the silicon oxide film has a thickness of no more than about 2 nm.
Metal silicides are silicon compounds used in the formation of low resistivity ohmic contacts in microelectronics. This patent from the Wisconsin Alumni Research Foundation teaches a fabrication process for growing metal silicide nanowires on ultrathin silicon oxide films which could provide extremely small gate lines for nano-MOSFETs. Claim 1 reads:
1. A method for producing single-crystal, free-standing transition metal silicide nanowires comprising growing the nanowires on a surface of a silicon oxide film on a silicon substrate, wherein the silicon oxide film has a thickness of no more than about 2 nm.
posted by blaisemouttet at 3:27 PM
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