Thursday, September 30, 2010

US Patent 7803707 - Fabrication of metal silicide nanowires

Metal silicides are silicon compounds used in the formation of low resistivity ohmic contacts in microelectronics. This patent from the Wisconsin Alumni Research Foundation teaches a fabrication process for growing metal silicide nanowires on ultrathin silicon oxide films which could provide extremely small gate lines for nano-MOSFETs. Claim 1 reads:   

1. A method for producing single-crystal, free-standing transition metal silicide nanowires comprising growing the nanowires on a surface of a silicon oxide film on a silicon substrate, wherein the silicon oxide film has a thickness of no more than about 2 nm.